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| NTE5491 thru NTE5496 Silicon Controlled Rectifier (SCR) 10 Amp Description: The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half-wave AC control applications such as motor controls, heating controls, power supplies, or wherever half-wave silicon gate-controlled, solid-state devices are needed. Features: D Glass-Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability D Blocking Voltage to 600 Volts Absolute Maximum Ratings: (TJ = +125C unless otherwise specified) Peak Repetitive Off-State Blocking Voltage, VRRM, VDRM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Non-Repetitive Reverse Voltage, VRSM NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V RMS On-State Current (All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Average On-State Current (TC = +65C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak Non-Repetitive Surge Current, ITSM (One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A Circuit Fusing Considerations (TJ = -40 to +125C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . 93A2s Peak Gate Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Forward Gate Current, IGT NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Average Forward Blocking Current NTE5491 NTE5492 NTE5494 NTE5496 Average Reverse Blocking Current NTE5491 NTE5492 NTE5494 NTE5496 Peak Forward Blocking Current Peak Reverse Blocking Current Peak On-State Voltage DC Gate-Trigger Current DC Gate-Trigger Voltage Gate Non-Trigger Voltage DC Holding Current Critical Rate-of-Rise of Off-State Voltage IDRM IRRM VTM IGT VGT VGD IH dv/dt Rated VDRM, Gate Open Rated VRRM, Gate Open, TJ = +125C ITM = 50.3A Peak, Note 1 VAK = 12VDC, RL = 50 VAK = 12VDC, RL = 50 VAK = 12V, Gate Open Rated VDRM, Exponential Waveform, TC = +125C, Gate Open IR(AV) Rated VRRM , Gate Open TJ = +125C Symbol ID(AV) Test Conditions Rated VDRM , Gate Open TJ = +125C Min Typ Max Unit - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.65 - 7.3 30 6.5 6.0 4.0 2.5 6.5 6.0 4.0 2.5 10 20 2 40 2.0 - 50 - mA mA mA mA mA mA mA mA A mA V mA V V mA V/s Rated VDRM, RL = 50, TJ = +125C 0.25 Note 1. Pulse Test: Pulse Width 1ms, Duty Cycle 2%. .562 (14.28) Max Gate Cathode 1.193 (30.33) Max .200 (5.08) Max .453 (11.5) Max Anode 1/4-28 UNF-2A |
Price & Availability of NTE5496
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